High Resolution Electron Beam Testing of Gallium Nitride Based Light Emitting Diodes

High Resolution Electron Beam Testing of Gallium Nitride Based Light Emitting Diodes

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Results from STEM-EBIC/CL suggest V-defects enhance unwanted Mg diffusion into the active layer. Diffusion at V-defect reduces field strength resulting in reduced EBIC while clustering of V-defects enables sufficient Mg diffusion to produce a pn-junction shift.... b) Angled-view of completed interconnect.........................68 Modified alligator clip for electrical testing with LED emitting under bias.69 I-V curve interconnect to grid contact......................................................70 I-V curve LED die vs. lift-out.


Title:High Resolution Electron Beam Testing of Gallium Nitride Based Light Emitting Diodes
Author: Curtis Lorenz Progl
Publisher:ProQuest - 2008
ISBN-13:

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