Bias Temperature Instability for Devices and Circuits

Bias Temperature Instability for Devices and Circuits

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This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.8.8 Schematic drawing of the Pb0 and Pb1 Si/SiO2 interface defects ( Reproduced from [42]) Fig. ... The sketches provide only a crude semiquantitative representation (Reproduced from [19]) Silicon Bandgap Energy [eV] -0.2 0.1 0.4 0.7 1 S D R I n t e n s i t y [ A r b . ... The Pb0 dashed lines are included as merely a guide for the eye (Reproduced from [19]) Si analog, the Pb0 center, have a broadly peakedanbsp;...

Title:Bias Temperature Instability for Devices and Circuits
Author: Tibor Grasser
Publisher:Springer Science & Business Media - 2013-10-22

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