AlGaN-GaN-HEMT Power Amplifiers with Optimized Power-added Efficiency for X-band Applications

AlGaN-GaN-HEMT Power Amplifiers with Optimized Power-added Efficiency for X-band Applications

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After the small-signal simulations and stability analysis with ADS, the structures of the circuit should be examined with a 3D ... caused by the aquot;realaquot; capacity value which is not exactly simulated with the MIM capacitor out of the ADS design kit.


Title:AlGaN-GaN-HEMT Power Amplifiers with Optimized Power-added Efficiency for X-band Applications
Author: Jutta Kühn
Publisher:KIT Scientific Publishing - 2011
ISBN-13:

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